Devices Comprising A Capacitor And Support Material That Laterally Supports The Capacitor

ABSTRACT

A device comprises a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode is elongated and extends elevationally. The first electrode comprises elevationally-extending first conductive material and comprises second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material. The laterally-projecting second conductive material has a vertical thickness that is less than that of the elevationally-extending first conductive material. Support material laterally supports the capacitor and contacts a tip end of the laterally-projecting second conductive material.

TECHNICAL FIELD

Embodiments disclosed herein pertain to devices comprising a capacitorand support material that laterally supports the capacitor.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. Memory may be fabricated in one or more arraysof individual memory cells. Memory cells may be written to, or readfrom, using digit lines (which may also be referred to as bit lines,data lines, sense lines, or data/sense lines) and access lines (whichmay also be referred to as word lines). The digit lines may conductivelyinterconnect memory cells along columns of the array, and the accesslines may conductively interconnect memory cells along rows of thearray. Each memory cell may be uniquely addressed through thecombination of a digit line and an access line.

Memory cells may be volatile or non-volatile. Non-volatile memory cellscan store data for extended periods of time including when the computeris turned off. Volatile memory dissipates and therefore requires beingrefreshed/rewritten, in many instances multiple times per second.Regardless, memory cells are configured to retain or store memory in atleast two different selectable states. In a binary system, the statesare considered as either a “0” or a “1”. In other systems, at least someindividual memory cells may be configured to store more than two levelsor states of information.

A capacitor is one type of electronic component that may be used in amemory cell. A capacitor has two electrical conductors separated byelectrically insulating material. Energy as an electric field may beelectrostatically stored within such material. Depending on compositionof the insulating material, that stored field be volatile ornon-volatile. For example, a capacitor insulator including only SiO₂will be volatile. One type of non-volatile capacitor is a ferroelectriccapacitor which has ferroelectric material as at least part of theinsulating material. A memory cell incorporating a ferroelectriccapacitor ideally is non-volatile due to bi-stable characteristics ofthe ferroelectric material that forms a part of the capacitor. Otherprogrammable materials may be used as capacitor insulator materials torender capacitors non-volatile. Further and regardless, arrays ofcapacitors may be formed as part of an array of memory cells or an arrayin other integrated circuitry.

One manner of fabricating capacitors is to initially form an insulativeor other support material within which one of the capacitor electrodesis formed. For example, an array of capacitor electrode openings forindividual capacitors may be fabricated in an insulative supportmaterial, with an example material being silicon dioxide doped with oneor both of phosphorus and boron. Openings within which some or all ofthe capacitors are formed are etched into the support material.Conductive material is deposited to line and less-than-fill theindividual openings. The conductive material may be planarized or etchedback relative to the support material to form individual elevationallyinner capacitor electrodes within individual of the openings. In somemethods, most if not all of the support material is then etched away toenable the radially outer sidewall surfaces as well as the radiallyinner sidewall surfaces of the electrodes to provide capacitor surfacearea and thereby increased capacitance for the capacitors being formed.Yet, capacitor electrodes formed in deep openings are oftencorrespondingly much taller than they are wide. This can lead totoppling of the capacitor electrodes during etching to expose the outersidewall surfaces, during transport of the substrate, during depositionof the capacitor insulator material, and/or during deposition of theouter capacitor electrode material. Brace or lattice-like retainingstructures have been proposed and used to alleviate such toppling.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a hybrid schematic and diagrammatic cross-sectional view of adevice comprising a capacitor in accordance with an embodiment of theinvention, and is taken through line 1-1 in FIG. 2.

FIG. 1A is an enlargement of the FIG. 1A circled portion in FIG. 1.

FIG. 1B is an enlargement of the FIG. 1B circled portion in FIG. 1.

FIG. 1C is an enlargement of the FIG. 1C circled portion in FIG. 1.

FIG. 2 is a cross-sectional view taken through line 2-2 in FIG. 1.

FIG. 3 is a diagrammatic cross-sectional view of a predecessorconstruction in process to produce a device in accordance with anembodiment of the invention.

FIG. 3A is an enlargement of the FIG. 3A circled portion in FIG. 3.

FIG. 4 is a diagrammatic cross-sectional view of a predecessorconstruction in process to produce a device in accordance with anembodiment of the invention.

FIG. 5 is a diagrammatic cross-sectional view of a predecessorconstruction to the device of FIG. 1.

FIG. 6 is a view of the FIG. 5 construction at a processing stepsubsequent to that shown by FIG. 5.

FIG. 7 is a view of the FIG. 6 construction at a processing stepsubsequent to that shown by FIG. 6.

FIG. 8 is a view of the FIG. 7 construction at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 8 construction at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view of the FIG. 9 construction at a processing stepsubsequent to that shown by FIG. 9.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Embodiments of the invention encompass devices that comprise a capacitor(i.e., at least one capacitor) and support material that laterallysupports the capacitor (i.e., at least supports the capacitor from anycomponent thereof moving or tipping laterally). Initial exampleembodiments are described with reference to FIGS. 1, 1A-1C, and 2. Suchdepict a portion of a substrate fragment or construction 10 comprising abase substrate 12 having an array of individual capacitors 14there-over. Base substrate 12 may include any one or more ofconductive/conductor/conducting (i.e., electrically herein),semiconductive, or insulative/insulator/insulating (i.e., electricallyherein) materials. Various materials are shown above base substrate 12.Materials may be aside, elevationally inward, or elevationally outwardof the depicted FIGS. 1, 1A-1C, and 2 materials. For example, otherpartially or wholly fabricated components of integrated circuitry may beprovided somewhere above, about, or within substrate 12. Control and/orother peripheral circuitry for operating components within an array suchas a memory array may also be fabricated, and may or may not be whollyor partially within an array or sub-array. Further, multiple sub-arraysmay also be fabricated and operated independently, in tandem, orotherwise relative one another. As used in this document, a “sub-array”may also be considered as an array. Regardless, any of the materials,regions, and structures described herein may be homogenous ornon-homogenous, and regardless may be continuous or discontinuous overany material which such overlie. Further, unless otherwise stated, eachmaterial may be formed using any suitable or yet-to-be-developedtechnique, with atomic layer deposition, chemical vapor deposition,physical vapor deposition, epitaxial growth, diffusion doping, and ionimplanting being examples.

The discussion largely proceeds with reference to a single capacitor 14,although it will be apparent that aspects of the invention anddisclosure may apply equally with respect to an array of capacitors,such as shown. Access devices 15 are schematically shown in FIG. 1, andmay be formed as part of base substrate 12. By way of example only, suchmay comprise field effect transistors for controlling access toindividual capacitors 14, for example in DRAM circuitry where an accessdevice 15 and a capacitor 14 comprise components of a single memory cell(e.g., a one transistor, one capacitor [1T/1C] memory cell). However,other memory and non-memory circuitry are contemplated and whetherexisting or yet-to-be-developed.

Example base substrate 12 is shown as comprising dielectric material 16(e.g., doped and/or undoped silicon dioxide) having conductive vias 18extending there-through for electrically coupling an individual accessdevice 15 to an individual capacitor 14. Example conductive materialsfor vias 18 are one or more of elemental metal, a mixture or alloy oftwo or more elemental metals, conductive metal compounds, andconductively doped semiconductive materials, with TiN and W beingexamples. A dielectric material 20 (e.g., silicon nitride and/or siliconoxynitride) is shown atop base substrate 12, and includes openings 22there-through that overlap with an individual conductive via 18.Material 20 may have functioned as an etch-stop during fabrication.Additionally and/or alternately, dielectric material 20 may function assupport material that provides lateral support for a capacitor as willbe apparent below.

Individual capacitors 14 comprise a first electrode 24, a secondelectrode 26, and capacitor insulator material 28 there-between. Firstand second electrodes 24, 26, respectively, are conductive and may be ofthe same composition or of different compositions relative one another,and may be of the same composition or of different composition as thatof conductive vias 18. One specific example is TiN. Example capacitorinsulator materials include one or more of silicon dioxide, siliconnitride, and an insulative metal oxide that comprises one or moreelements among zirconium, hafnium, aluminum, niobium, yttrium, andtantalum. Such materials will typically result in capacitors 14 beingvolatile whereby the capacitors will lose a charge state over time aswell as upon removal of voltage application to one or both of capacitorelectrodes 24 and 26. Alternately, capacitor insulator material 28 maycomprise programmable material such that the individual capacitors arenon-volatile and programmable into at least two different magnitudecapacitive states (e.g., whereby the programmable material is bothsufficiently thick and remains insulative in the different states suchthat current does not flow there-through at operating voltages). Oneexample such programmable material is ferroelectric materials.

Individual first electrodes 24 are elongated and extend elevationally.In this document, unless otherwise indicated, “elevational(ly)”,“higher”, “upper”, “lower”, “top”, “atop”, “bottom”, “above, “below”,“under”, “beneath”, “up”, and “down” are generally with reference to thevertical direction. Further, “vertical” and “horizontal” as used hereinare directions that are perpendicular or within 10 degrees ofperpendicular relative one another independent of orientation of thesubstrate in three-dimensional space. “Horizontal” refers to a generaldirection along a primary surface relative to which the substrate wasprocessed during fabrication. Also, “extend(ing) elevationally” and“elevationally-extending” in this document encompasses a range fromvertical to no more than 45° from vertical. First electrode 24 in oneembodiment comprises sidewalls 30 extending to/from a base 32, and inone embodiment as shown forms an upwardly-facing cup or container shape.Sidewalls 30 may extend vertically (not shown) or taper from vertical(e.g., as shown). Sidewalls 30 may extend linearly straight (e.g., asshown), be curved, include a combination of curved and straightsegments, etc. In other embodiments and by way of example only, theindividual first electrodes may be elevationally-extending solidpillars/pedestals (not shown) that are completely solid there-across inhorizontal cross-section (e.g., not having a hollow, upwardly open,center in a cup/container shape).

In the example depicted embodiment, first electrode 24 is of adouble-sided configuration wherein capacitor insulator 28 and secondelectrode 26 are both radially within and radially outside of sidewalls30. Second electrode 26 is shown as being a lining that less-than-fillsthe container/cup opening shape radially inward of sidewalls 30.Alternately, such may completely fill (not shown) the depicted internalcup-shape and/or the depicted void space that is laterally/radiallyoutward of sidewalls 30. An example minimum lateral/radial thickness ofthe majority of first electrode sidewalls 30 is 30 to 75 Angstroms,while that for capacitor insulator 28 is 30 to 100 Angstroms. In otherembodiments and by way of example only, the first electrodes may be of asingle-sided configuration (not shown) wherein the capacitor insulatoronly externally surrounds radially about each of sidewalls 30 ofindividual first electrodes.

In this document, “thickness” by itself (no preceding directionaladjective) is defined as the mean straight-line distance through a givenmaterial or region perpendicularly from a closest surface of animmediately adjacent material of different composition or of animmediately adjacent region. Additionally, the various materials orregions described herein may be of substantially constant thickness orof variable thicknesses. If of variable thickness, thickness refers toaverage thickness unless otherwise indicated, and such material orregion will have some minimum thickness and some maximum thickness dueto the thickness being variable. As used herein, “different composition”only requires those portions of two stated materials or regions that maybe directly against one another to be chemically and/or physicallydifferent, for example if such materials or regions are not homogenous.If the two stated materials or regions are not directly against oneanother, “different composition” only requires that those portions ofthe two stated materials or regions that are closest to one another bechemically and/or physically different if such materials or regions arenot homogenous. In this document, a material, region, or structure is“directly against” another when there is at least some physical touchingcontact of the stated materials, regions, or structures relative oneanother. In contrast, “over”, “on”, “adjacent”, “along”, and “against”not preceded by “directly” encompass “directly against” as well asconstruction where intervening material(s), region(s), or structure(s)result(s) in no physical touching contact of the stated materials,regions, or structures relative one another.

Referring to FIGS. 1 and 1A, and in one embodiment, first electrode 24comprises elevationally-extending first conductive material 38 having anexample elevationally-extending part 40 thereof. First electrode 24 alsohas a second conductive material 42 that projects laterally outward fromelevationally-extending part 40 of first conductive material 38.Laterally-projecting second conductive material 42 has a verticalthickness T₂ that is less than that of elevationally-extending firstconductive material 38 (T₁ in FIG. 1). In one embodiment, secondconductive material 42 laterally projects or laterally extends exactlyhorizontally. Regardless, an example horizontal projecting distance froma most-proximate radially-outermost surface (e.g., surface 39 in FIG.1A) of first conductive material 38 is 10 to 100 Angstroms.

First conductive material 38 and second conductive material 42 may be ofthe same composition relative one another (as shown) or may be ofdifferent compositions relative one another (not shown in FIGS. 1, 1A,and 2). Regardless, laterally-projecting second conductive material 42has a tip end 44 which in one embodiment comprises avertically-extending surface 45. In one embodiment, laterally-projectingsecond conductive material 42 comprises an upper surface 46 and a lowersurface 48 that extend horizontally. In one embodiment,laterally-projecting second conductive material 42 comprises alaterally-projecting ring 50 (FIGS. 1A and 2) that completely encircleselevationally-extending part 40 of first conductive material 38.

Support material 52 laterally supports individual capacitors 14 andcontacts tip end 44 (i.e., is directly there-against) oflaterally-projecting second conductive material 42. Support material 52is ideally non-conductive where such supports multiple capacitors topreclude shorting the first electrodes of different capacitors together.Ideal support materials are dielectric, for example silicon dioxide,silicon nitride, and/or silicon oxynitride. In one embodiment and asshown, second conductive material 42 and support material 52 have thesame vertical thickness, with an example such thickness being 50 to 200Angstroms.

In one embodiment and as shown, laterally-projecting second conductivematerial 42 and support material 52 are located at an elevationalmid-portion of first electrode 24, and in one example embodiment may beprecisely elevationally centered relative to thickness T₁. Alternately,the laterally-projecting second conductive material may be located at atop of the first electrode or at the bottom of the bottom firstelectrode. In the depicted example embodiments, multi-levelelevationally-spaced support materials are shown. However, only a singlelevel of support material as referred to above may be used whether at anelevational mid-portion of the first electrode, the top of the firstelectrode, at the bottom of the first electrode, or elsewhere. Further,while the example embodiments show three levels of support material(e.g., where material 20 is also considered as a support material) asfurther described below, two or more than three levels of supportmaterial may be used that are directly against first electrode 24.

As an example, laterally-projecting second conductive material 42 may beconsidered as comprising a first lateral projection 55,elevationally-extending part 40 of first conductive material 38 may beconsidered as comprising a first elevational part 40, and contactingsupport material 52 may be considered as comprising a first level 56 ofsupport material 52. Referring to FIGS. 1 and 1C, first electrode 24comprises a second lateral projection 55 x comprising second conductivematerial 42 that projects laterally outward from a secondelevationally-extending part 40 x of first conductive material 38, withsecond elevationally-extending part 40 x being different (i.e., not thesame elevational part of first conductive material 38) and verticallyspaced from first elevational part 40. A second level 56 x of supportmaterial 52 is vertically spaced from first level 56 of support material52 and laterally supports the capacitor. Second level 56 x of thesupport material 52 contacts a tip end 44 x of second conductivematerial 42 of second lateral projection 55 x. Such may comprisesurfaces 45 x, 46 x, and 48 x analogous to surfaces 45, 46, 48,respectively, of first lateral projection 55. Use of first and secondwith respect to the lateral projections and levels herein is merely forconvenience in distinguishing the different lateral projections andlevels relative one another, and may be reversed. Regardless and in oneembodiment as shown and described immediately above, one of the firstand second lateral projections, its associated elevational part of firstconductive material 38, and its associated level of support material(i.e., considered collectively) is located at an elevational mid-portionof the first electrode and the other of such is located at the top offirst electrode 24. Regardless and in one embodiment as shown, secondlateral projection 55 x is vertically thicker than first lateralprojection 55.

Referring to FIGS. 1 and 1B, a bottom of first electrode 24 may beconsidered as comprising a third lateral projection 55 y comprisingsecond conductive material 42 that projects laterally outward from athird elevational part 40 y of first conductive material 38, and that isdifferent and vertically spaced from first elevational part 40. Material20 may be considered as a third level 56 y of support material that isvertically spaced from first level 56 of support material 52 and whichalso laterally supports the capacitor. Third level 56 y of supportmaterial 20 contacts a tip end 44 y of second conductive material 42 ofthird lateral projection 55 y. Third lateral projection 55 y may be ofthe same or different thicknesses relative to first lateral projection55 and/or second lateral projection 55 x. Third lateral projection 55 ymay comprise surfaces 45 y, 46 y, and 48 y analogous to surfaces 45, 46,48, respectively, of first lateral projection 55.

Third lateral projection 55 y and/or second lateral projection 55 x maycomprise a laterally-projecting ring (e.g., analogous to ring 50 offirst lateral projection 55) that completely encircleselevationally-extending part 40 y and/or 40 x, respectively, of firstconductive material 38.

First capacitor electrodes 24 extend to conductive vias 18 throughvertically-aligned openings formed through support materials 52 and 20.Support material 20 and support material 52 may be of the samecomposition or of one or more different compositions relative oneanother. With respect to multiple capacitors, one or more of supportmaterials 52 and 20 may be in the form of a plate that contacts andlaterally supports the respective first capacitor electrodes 24, forexample as shown with respect to each. Capacitor insulator 28 may extendover all surfaces of support materials 52 and 20 where they do notcontact first electrodes 24, for example as shown. Further in a finishedcircuit construction, insulative material would likely fill all thedepicted void space further supporting the capacitors.

An alternate embodiment construction 10a in comparison to that of FIGS.1, 1A-C, and 2 is described with reference to FIGS. 3 and 3A. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “a” or with different numerals. FIG. 3 corresponds to thedepiction of FIG. 1, yet does not show the capacitor insulator materialnor the second electrode of individual capacitors for clarity in FIG. 3.First electrode 24a comprises elevationally-extending first conductivematerial 38 that may be considered as comprising a laterally-outersidewall surface 64 thereof (FIG. 3A). Second material 66 contacts anelevationally-extending part 40 of first conductive materiallaterally-outer sidewall surface 64, with second material 66 projectinglaterally-outward from elevationally-extending part 40 of first materiallaterally-outer sidewall surface 64. Second material 66 is of differentcomposition from that of first conductive material 38 and is at leastone of conductive or semiconductive. Where conductive, the embodimentdepicted in FIG. 3 may have any of the attributes described above withrespect to the first embodiment. Even where semiconductive, theembodiment of FIG. 3 may also have any of the attributes as describedabove with respect to the FIGS. 1, 1A-C, and 2 embodiment but for secondmaterial 66 being semiconductive. Support material 52 laterally supportsthe resulting capacitor, with the support material contacting a tip end44 of laterally-projecting second material 66.

Further for example and as shown, three levels of support material andfirst, second, and third lateral projections 55, 55 x, and 55 y,respectively, may be used. Some or all of lateral projections 55, 55 x,and 55 y may be of the same composition or of different compositionsrelative one another, and each need not comprise a different compositionsecond material 66 relative to first material 38 as long at least onedoes, in one embodiment. Any other attribute(s) or aspect(s) asdescribed above and/or shown in the figures pertaining thereto may beused.

An alternate embodiment construction 10 b is next described withreference to FIG. 4. Like numerals from the above-described embodimentshave been used where appropriate, with some construction differencesbeing indicated with the suffix “b” or with different numerals. Again,FIG. 4 is analogous to FIG. 1 yet does not show the capacitor insulatormaterial nor the second electrode for clarity in FIG. 4. First electrode24 b is shown as being essentially the same as that in FIG. 1 exceptwherein it has opposing sidewalls 30 b that bow radially-outward in atleast one vertical cross-section (e.g., the vertical cross-section ofthe construction as shown in FIG. 4). Lateral projections 55, 55 x, 55 yrelative to bowing sidewalls 30 b are shown as being of the samecomposition as that of first conductive material 38, although such couldbe of a different conductive composition or of a semiconductivecomposition for example as described above in connection with FIGS. 3and 3A. However and regardless, in one embodiment first electrode 24 bis elongated, extends elevationally, and includes a pair P of radiallyopposing sidewalls 30 b that bow radially-outward in at least onevertical cross-section.

First electrode 24 b comprises elevationally-extending conductivematerial 38 with a portion 55 thereof projecting laterally outward froman elevationally-extending part 40 of conductive material 38 in the atleast one vertical cross-section. Support material 52 laterally supportsthe capacitor, and contacts a tip end 44 of laterally-projecting portion55 of conductive material 38. In one embodiment and as shown, opposingsidewalls 30 b bow radially-outward in the vertical cross-section agreater distance than does laterally-projecting portion 55 of conductivematerial 38 from its elevationally-extending part/portion 40 conductivematerial 38 in the vertical cross-section. In one embodiment and asshown, the laterally-projecting portion of the conductive material andthe support material are located at an elevational mid-portion of thefirst electrode.

Pairs P of opposed radially-bowing sidewalls may be considered as beingabove laterally-projecting portions 55, with, in one embodiment, theconstruction further comprising other pairs P₁ of radially-opposingsidewalls 35 that bow radially-outward in the vertical cross-sectionbelow laterally-projecting portion 55. Any other attribute(s) oraspect(s) as described above and/or shown in the figures pertainingthereto may be used. Prior art constructions exist havingoutwardly-bowing sidewalls, but not with laterally-projecting portions55.

Devices in accordance with the invention may be manufactured inaccordance with any existing or yet-to-be-developed techniques. Exampletechniques are next described with reference to FIGS. 5-10. Likenumerals from the above-described embodiments have been used whereappropriate for predecessor constructions and materials. FIG. 5 showsconstruction 10 having etch stop/support material 20 and supportmaterials 52 fabricated there-over. Sacrificial material 70 is betweensupport material 20 and mid-support material 52 and sacrificial material70 is between upper-support material 52 and mid-support material 52.Such regions of sacrificial material 70 may be of the same compositionor of different compositions relative one another, with an example beingboron and/or phosphorus doped silicate glass or silicon dioxide.Material 70 may be subjected to thermal treatment (e.g., nitrogenannealing for densification).

Referring to FIG. 6, openings 72 within which capacitor electrodes willbe formed have been formed through materials 52, 70, and 20 to exposeconductive vias 18. An example maximum diameter ofelevationally-outermost portions of openings 72 is 200 to 600 Angstroms.An example technique for forming the construction of FIG. 6 includesphotolithographic patterning and etch, with or without using pitchmultiplication.

Referring to FIG. 7, support materials 20 and 52 have been subjected tosuitable etching such that they are laterally recessed relative to thesidewalls of openings 72 as originally shown in FIG. 6. The depictedlateral recesses may be formed using any suitable dry and/or wetetchant(s) that etches materials 20 and 52 selectively relative tosacrificial material 70.

Referring to FIG. 8, first conductive material 38 has been depositedinto openings 72 so as to fill the depicted lateral recesses, followedby removing material 38 from being received over horizontal surfaces ofupper support material 52. First conductive material 38 may notnecessarily completely fill the recesses whereby such forms a liningthat less-than-fills such recesses. Accordingly, in method and structureembodiments, the second conductive material and lateral projectionformed thereby may be of a right-facing and left-facing C-shape (notshown) in vertical cross-section.

Referring to FIG. 9, portions of upper support material 52 and firstconductive material 38 have been removed to form openings 74 (only onebeing shown) which extend to upper sacrificial material 70. Openings 74provide access for wet etching chemicals to reach and remove sacrificialmaterial 70, and for access to first conductive material 38 forformation of capacitor insulator material and second electrode materialthere-over. Formation of openings 74 may be conducted by suitablephotolithographic patterning and etch of materials 38 and 70 using oneor more etching steps.

Referring to FIG. 10 the depicted upper and lower sacrificial materials70 (not shown) have been removed, for example by selective wet etchingusing HF where material 70 predominantly comprise silicon dioxide.Subsequent processing (not shown) would occur that includes depositionof capacitor insulator 28 and conductive material for second electrodes26 to produce, for example, a construction like that shown in FIGS. 1,1A-1C, and 2.

For producing the example embodiment of FIG. 3, second material 66 (notshown) could be deposited to initially line openings 72 and fill or linethe lateral recesses. This could be followed by an anisotropic etch toleave the second material only within the recesses. Thereafter,conductive material 38 could be deposited analogously as shown in FIG.8, followed by subsequent processing.

For fabrication of a capacitor in accordance with the example FIG. 4embodiment and as described, etching conditions for forming openings 72may be modified as determinable by persons of skill in the art toinherently cause a lateral-outward bowing effect of sacrificial material70 upon formation of openings 72, followed by deposition of conductivematerial 38 (or second material 66, then material 38). Alternately, theconstruction of FIG. 6 could be subjected to one or more suitableisotropic and/or anisotropic etching chemistries to cause a bowingeffect to sacrificial material 70 after openings 72 are initiallyformed.

Conclusion

In some embodiments, a device comprises a capacitor comprising first andsecond electrodes having a capacitor insulator there-between. The firstelectrode is elongated and extends elevationally. The first electrodecomprises elevationally-extending first conductive material andcomprises second conductive material that projects laterally outwardfrom an elevationally-extending part of the first conductive material.The laterally-projecting second conductive material has a verticalthickness that is less than that of the elevationally-extending firstconductive material. Support material laterally supports the capacitorand contacts a tip end of the laterally-projecting second conductivematerial.

In some embodiments, a device comprises a capacitor comprising first andsecond electrodes having a capacitor insulator there-between. The firstelectrode is elongated and extends elevationally. The first electrodecomprises elevationally-extending first conductive material comprising alaterally-outer sidewall surface. Second material contacts anelevationally-extending part of the first conductive materiallaterally-outer sidewall surface and projects laterally outward from theelevationally-extending part of the first material laterally-outersidewall surface. The second material is of different composition fromthat of the first conductive material and is at least one of conductiveor semiconductive. Support material laterally supports the capacitor andcontacts a tip end of the laterally-projecting second material.

In some embodiments, a device comprises a capacitor comprising first andsecond electrodes having a capacitor insulator there-between. The firstelectrode is elongated, extends elevationally, and includes a pair ofradially opposing sidewalls that bow radially-outward in at least onevertical cross-section. The first electrode compriseselevationally-extending conductive material. A portion of the conductivematerial projects laterally outward from an elevationally-extending partof the conductive material in the at least one vertical cross-section.Support material laterally supports the capacitor and contacts a tip endof the laterally-projecting portion of the conductive material.

In some embodiments, a device comprises a capacitor comprising a firstelectrode and support material supporting the capacitor. The firstelectrode comprises first conductive material extending vertically andsecond conductive material projecting horizontally from a part of thefirst conductive material. The support material supports the capacitorin contact with a tip end of the second conductive material.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A device comprising: a capacitor comprising first and second electrodes having a capacitor insulator there-between; the first electrode being elongated and extending elevationally, the first electrode comprising elevationally-extending first conductive material and comprising second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material, the laterally-projecting second conductive material having a vertical thickness that is less than that of the elevationally-extending first conductive material; and support material that laterally supports the capacitor, the support material contacting a tip end of the laterally-projecting second conductive material.
 2. The device of claim 1 wherein the tip end of the laterally-projecting second conductive material comprises a vertically-extending surface.
 3. The device of claim 1 wherein the laterally-projecting second conductive material has upper and lower surfaces that extend horizontally.
 4. The device of claim 1 wherein the first and second conductive materials are of the same composition relative one another.
 5. The device of claim 1 wherein the first and second conductive materials are of different compositions relative one another.
 6. The device of claim 1 wherein the first electrode has opposing sidewalls that bow radially-outward in at least one vertical cross-section.
 7. The device of claim 1 wherein the laterally-projecting second conductive material has a vertical thickness that is the same as that of the support material.
 8. The device of claim 1 wherein the laterally-projecting second conductive material and the support material are located at an elevational mid-portion of the first electrode.
 9. The device of claim 1 wherein the laterally-projecting second conductive material and the support material are located at a top of the first electrode.
 10. The device of claim 1 wherein the laterally-projecting second conductive material comprises a laterally-projecting ring that completely encircles the elevationally-extending part of the first conductive material.
 11. The device of claim 1 wherein the laterally-projecting second conductive material comprises a first lateral projection, the elevationally-extending part of the first conductive material comprises a first elevational part, and the contacting support material comprises a first level of support material; and further comprising: a second lateral projection comprising the second conductive material and that projects laterally outward from a second elevational part of the first conductive material that is different and vertically spaced from the first elevational part; and a second level of support material vertically spaced from the first level of support material and that laterally supports the capacitor, the second level of support material contacting a tip end of the second conductive material of the second lateral projection.
 12. The device of claim 11 wherein one of (a) and (b) is located at an elevational mid-portion of the first electrode, and the other of (a) and (b) is located at a top of the first electrode, where (a) collectively is the first lateral projection, the first elevational part, and the first level of support material; and (b) collectively is the second lateral projection, the second elevational part, and the second level of support material.
 13. The device of claim 12 wherein the other of (a) and (b) collectively is vertically thicker than the one of (a) and (b).
 14. The device of claim 11 wherein one of (a) and (b) is located at an elevational mid-portion of the first electrode, and the other of (a) and (b) is located at a bottom of the first electrode, where (a) collectively is the first lateral projection, the first elevational part, and the first level of support material; and (b) collectively is the second lateral projection, the second elevational part, and the second level of support material.
 15. The device of claim 11 further comprising: a third lateral projection comprising the second conductive material and that projects laterally outward from a third elevational part of the first conductive material that is different and vertically spaced from the first elevational part; and a third level of support material vertically spaced from the first level of support material and that laterally supports the capacitor, the third level of support material contacting a tip end of the second conductive material of the third lateral projection.
 16. A device comprising: a capacitor comprising first and second electrodes having a capacitor insulator there-between; the first electrode being elongated and extending elevationally, the first electrode comprising elevationally-extending first conductive material comprising a laterally-outer sidewall surface; second material contacting an elevationally-extending part of the first conductive material laterally-outer sidewall surface and that projects laterally outward from the elevationally-extending part of the first material laterally-outer sidewall surface, the second material being of different composition from that of the first conductive material and being at least one of conductive or semiconductive; and support material that laterally supports the capacitor, the support material contacting a tip end of the laterally-projecting second material.
 17. The device of claim 16 wherein the second material is conductive.
 18. The device of claim 16 wherein the second material is semiconductive.
 19. The device of claim 16 wherein the laterally-projecting second material comprises a first lateral projection, the elevationally-extending part of the first conductive material laterally-outer sidewall surface comprises a first elevational part, and the contacting support material comprises a first level of support material; and further comprising: a second lateral projection comprising the second material and that projects laterally outward from a second elevational part of the first conductive material laterally-outer sidewall surface that is different and vertically spaced from the first elevational part; and a second level of support material vertically spaced from the first level of support material and that laterally supports the capacitor, the second level of support material contacting a tip end of the second material of the second lateral projection.
 20. A device comprising: a capacitor comprising a first electrode; and support material supporting the capacitor; wherein the first electrode comprises: first conductive material extending vertically; and second conductive material projecting horizontally from a part of the first conductive material; and wherein the support material supports the capacitor in contact with a tip end of the second conductive material.
 21. The device of claim 20 wherein, the capacitor further comprises a second electrode and a dielectric film between the first and second electrodes; the first conductive material is formed in a cup shape to define a radially inner space and a radially outer space; the second conductive material projects in the radially outer space; and the second electrode is formed in the radially inner space.
 22. The device of claim 20 wherein, the first conductive material includes an upper end part, a bottom end part, and a mid-part between the upper end part and the bottom end part; and the second conductive material is projected horizontally from at least one of the upper end part, the bottom end part, and the mid-part of the first conductive material.
 23. The device of claim 20 wherein, the first conductive material includes an upper end part, a bottom end part, and a mid-part between the upper end part and the bottom end part; the second conductive material comprises first, second, and third portions; the first portion of the second conductive material projects horizontally from the upper end part of the first conductive material; the second portion of the second conductive material projects horizontally from the bottom end part of the first conductive material; and the third portion of the second conductive material projects horizontally from the mid-part of the first conductive material. 